Graphene Etchant

HTS-300C

Sulfuric Acid / Peroxide Based
Single-Solution Copper Etchant

Sulfuric acid and hydrogen peroxide based single-solution etchant

Provides uniform etching performance for copper and copper alloy materials

A product concentrated 4 times higher than general usage concentration.

Concentration can be adjusted according to the required etching rate (process line)

Applicable to copper etching for graphene manufacturing.

Component Content Characteristics
Hydrogen Peroxide 6% Oxidation of copper material
Sulfuric Acid 20% Copper dissolution
Others Includes hydrogen peroxide stabilizers, chelating agents,
etching uniformity agents, etc.

Differences in Copper Foil Materials

RA Copper Foil Manufacturing Process

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ED Copper Foil Manufacturing Process

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Copper Foil Etching Results for Graphene Manufacturing

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Before After
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Non-uniform copper etching and graphene damage occur when using general etchants

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When HTS-300C is applied, uniform copper foil etching minimizes graphene damage