Cu-Ti Hybrid Etchant

HBE-500

Product : HBE-500

Eco-friendly Hybrid Wet Etchant for WLCSP that uniformly removes sputtered Cu & Ti layers simultaneously.

Item Details
Performance Eco-friendly chemical (F-free)
Metal damage free (SnAg, Ni, Au, Al, etc.)
Enables fine & precise patterns comparable to separate Cu/Ti etching processes
Excellent process capacity
Form Applicable as a 1-part or 2-part solution
Applications WLCSP, MEMS processes, etc.
Mini character image

Process

Conventional Process
Conventional process image

Hybrid Process

Hybrid process image

Process

Conventional Process
Cu seed Thk. : 100~500nm
Ti seed Thk. : 50~150nm
Conventional process detail image

Hybrid Process

Hybrid process detail image

Line Side Loss (Plated Cu Pattern)

Before Etch Just Etch 100% Over Etch 200% Over Etch
Top View Top view image 1 Top view image 2 Top view image 3 Top view image 4
Cross Section Cross section image 1 Cross section image 2 Cross section image 3 Cross section image 4
26.2㎛ 26.2㎛ 25.3㎛ (-3.4%) 24.5㎛ (-6.5%)

Process Capacity

TEST Sheet Processing Evaluation
PTW (RDL) 1 Sheet 100 Sheets 150 Sheets 200 Sheets 250 Sheets
E/R (nm/sec) 2.3 2.3 2.2 2.2 2.2
Undercut (nm) 373.9 254.4 185.0 - -

E/R & Undercut by Processing Capacity

Graph image 1 Graph image 2
1 Sheet 100 Sheets 150 Sheets 200 Sheets 250 Sheets
Surface Surface image 1 Surface image 2 Surface image 3 Surface image 4 Surface image 5
Undercut
(nm)
Undercut image 1 Undercut image 2 Undercut image 3 Undercut image 4 Undercut image 5
373.9 254.4 185.0 - 100% Over etch